Electrical activation and electron spin coherence of ultralow dose antimony implants in silicon

Uphill diffusion of ultralow-energy boron implants in preamorphized silicon and silicon-on-insulator

Redistribution during annealing of low-energy boron B implants in silicon on insulator SOI structures and in bulk Si has been investigated by comparing secondary ion mass spectrometry SIMS and simulated profiles. All the samples have been preamorphized with Ge at different implantation energies in order to investigate the effects of the position of the damage on B diffusion. Different B doses i...

Long-lived spin coherence in silicon with an electrical spin trap readout.

Pulsed electrically detected magnetic resonance of phosphorous (31P) in bulk crystalline silicon at very high magnetic fields (B0>8.5 T) and low temperatures (T=2.8 K) is presented. We find that the spin-dependent capture and reemission of highly polarized (>95%) conduction electrons by equally highly polarized 31P donor electrons introduces less decoherence than other mechanisms for spin-to-ch...

Electron spin coherence of silicon vacancies in proton-irradiated 4H-SiC

We report T2 spin coherence times for electronic states localized in Si vacancies in 4H -SiC. Our spin coherence study included two SiC samples that were irradiated with 2 MeV protons at different fluences (1013 and 1014 cm−2) in order to create samples with unique defect concentrations. Using optically detected magnetic resonance and spin echo, the coherence times for each sample were measured...

Spintronics: electron spin coherence, entanglement, and transport

The prospect of building spintronic devices in which electron spins store and transport information has attracted strong attention in recent years. Here we present some of our representative theoretical results on three fundamental aspects of spintronics: spin coherence, spin entanglement, and spin transport. In particular, we discuss our detailed quantitative theory for spin relaxation and coh...

Photomodulated electron-spin resonance in amorphous silicon